{"title":"Gating circuit developed for high power thyristors","authors":"N. Seki, Y. Tsuruta, K. Ichikawa","doi":"10.1109/PESC.1981.7083642","DOIUrl":null,"url":null,"abstract":"Gate turn off thyristor (GTO) gating circuits, especially off-gating circuits, are the most important for reliable operation of GTO equipment. This paper describes a new gating circuit for high power GTO of 600A class. The off-gating circuit can provide a negative pulse of 200A with its rate of rise of 30A/us. Its power dissipation decreases to 20 percent of a previous type. The on-gating and negative bias circuits are also described.","PeriodicalId":165849,"journal":{"name":"1981 IEEE Power Electronics Specialists Conference","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1981 IEEE Power Electronics Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PESC.1981.7083642","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
Gate turn off thyristor (GTO) gating circuits, especially off-gating circuits, are the most important for reliable operation of GTO equipment. This paper describes a new gating circuit for high power GTO of 600A class. The off-gating circuit can provide a negative pulse of 200A with its rate of rise of 30A/us. Its power dissipation decreases to 20 percent of a previous type. The on-gating and negative bias circuits are also described.