Annealing temperature effect on nanostructured TiO2 films

Abstract

The synthesization of TiO2 sol-gel, by using titanium dioxide nano powder as precursor. In the production of nanostructured TiO2, the annealing temperature for the film is differed to clarify the use of different temperature in annealing the film, the best temperature to get a good mobility in the current flow can be found. There are 7 samples with different drying temperature and different annealing temperature. The one with the highest IV characterization will be fabricated as thin film in the organic solar cell as the metal oxide film. As further discovered that the as-deposited without annealing sample have a quite thick film that it could not be characterized by Atomic Force Microscopy (AFM). The highest point of the current at 10 V in the IV graph is 500 C annealing temperature of 6.06E-9 A which then makes it the highest in conductivity at 3.37E-6 Sm-1. The current-voltage (I-V) measurement is used to study the electrical resistivity behaviour, hence the conductivity of the film to suit organic solar cell application.