{"title":"Characterization of Millimeter-Wave Active and Passive Components Embedded in Test Fixtures","authors":"G. Mehdi, Anyong Hu, Z. Cheng, J. Miao, A. Mueed","doi":"10.1109/FIT.2013.32","DOIUrl":null,"url":null,"abstract":"The performance of millimeter-wave active and passive components is sensitive to the discontinuities associated with the test fixtures. In order to accurately characterize the device-under-test (DUT) and obtain the DUT only performance, the fixture effects must be removed from the overall measurement. Such process is generally referred to as de-embedding. In this work, different de-embedding methods are reviewed and two of these namely the thru-reflect-line (TRL) and the thru-line (TL) are employed to de-embed an edge-coupled band-pass filter (BPF) and a low noise amplifier (LNA) both operating at Ka band. The two DUTs along with the TRL kit are realized on a substrate with dielectric constant of 6.2. Measured results obtained from the two methods are compared.","PeriodicalId":179067,"journal":{"name":"2013 11th International Conference on Frontiers of Information Technology","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 11th International Conference on Frontiers of Information Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/FIT.2013.32","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The performance of millimeter-wave active and passive components is sensitive to the discontinuities associated with the test fixtures. In order to accurately characterize the device-under-test (DUT) and obtain the DUT only performance, the fixture effects must be removed from the overall measurement. Such process is generally referred to as de-embedding. In this work, different de-embedding methods are reviewed and two of these namely the thru-reflect-line (TRL) and the thru-line (TL) are employed to de-embed an edge-coupled band-pass filter (BPF) and a low noise amplifier (LNA) both operating at Ka band. The two DUTs along with the TRL kit are realized on a substrate with dielectric constant of 6.2. Measured results obtained from the two methods are compared.