Manufacturing and research of transistors with resonance tunneling

2000 10th International Crimean Microwave Conference. "Microwave and Telecommunication Technology". Conference Proceedings (IEEE Cat. No.00EX415) Pub Date : 2000-09-11 DOI:10.1109/CRMICO.2000.1256163

A. Dorofeev, Y. Matveev, A.A. Cherniavski

引用次数: 0

Abstract

The paper defines the construction of a resonant-tunneling transistor (RTT), optimised for practical realization. The technology has been worked out and the RTT samples have been produced. Their static and dynamic performances as well as the working band have been analyzed. It has been shown that the devices are efficient up to 21 GHz.

查看原文本刊更多论文

共振隧道晶体管的制造与研究

本文定义了谐振隧道晶体管(RTT)的结构，并针对实际实现进行了优化。研究了该工艺，并制作了RTT样品。分析了它们的静、动态性能和工作波段。研究表明，该器件的效率高达21 GHz。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2000 10th International Crimean Microwave Conference. "Microwave and Telecommunication Technology". Conference Proceedings (IEEE Cat. No.00EX415)

自引率

0.00%

发文量