Investigation of the Shubnikov-de Haas effect in semiconductors by optical and microwave methods

Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289) Pub Date : 1999-09-21 DOI:10.1109/MIAME.1999.827803

A. A. Kornilovich

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Abstract

Studies of the dependence of the optical and microwave Shubnikov-de Haas (SdH) effect on magnetic field have been carried out to determine the transport and energetic parameters in semiconductors and systems such InSb, GaAs/Al/sub x/Ga/sub 1-x/As in the observation of this effect in the reflectivity and transmission of the probing radiation.

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用光学和微波方法研究半导体中的舒布尼科夫-德哈斯效应

为了确定半导体和InSb、GaAs/Al/sub -x/ Ga/sub - 1-x/As等系统的输运和能量参数，研究了光学和微波舒布尼科夫-德哈斯(SdH)效应对磁场的依赖性，并观察了这种效应对探测辐射的反射率和透射率的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289)

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