Submillimeter-Wave Schottky Diodes based on Heterogeneous Integration of GaAs onto Silicon

2019 United States National Committee of URSI National Radio Science Meeting (USNC-URSI NRSM) Pub Date : 2019-01-01 DOI:10.23919/USNC-URSI-NRSM.2019.8713040

R. Weikle, Linli Xie, S. Nadri, M. Jafari, Christopher M. Moore, Naser Alijabbari, M. Cyberey, N. S. Barker, A. Lichtenberger, Charles L. Brown

引用次数: 8

Abstract

This paper reports on the design and fabrication of quasi-vertical Schottky diodes for submillimeter-wave applications. Use of the diodes to implement an integrated 160 GHz frequency quadrupler are described.

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基于砷化镓在硅上非均匀集成的亚毫米波肖特基二极管

本文报道了用于亚毫米波应用的准垂直肖特基二极管的设计和制造。描述了使用二极管实现集成的160 GHz频率四倍器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2019 United States National Committee of URSI National Radio Science Meeting (USNC-URSI NRSM)

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