Experimental Study of Temperature Dependence of Program/Erase Endurance of Embedded Flash Memories with 2T-FNFN Device Architecture

Abstract

Most of the flash endurance results reported so far are typically in a temperature range of -40degC to +85degC, while devices in automotive "under the hood" applications can experience up to 150degC. This paper reports the temperature dependence of FN/FN based flash memories. Experiments have been carried out on 2.7Mb test memory arrays with temperatures up to 150degC. An empirical model has been developed to describe the temperature dependent degradation of the Vt window. This model fits the experimental data over the whole temperature range, and the endurance performance with single shot P/E cycles exceeds 1 million cycles