Optical parameters of (Ga0.4In0.6)2Se3 thin film

I. Studenyak, M. Kranjčec, M. Pop, V. Studenyak, L. Suslikov, Olga Yu. Pinaeva, P. Komada, S. Luganskaya, M. Kozhamberdiyeva, A. Mussabekova
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引用次数: 2

Abstract

(Ga0.4In0.6)2Se3 thin films were deposited by thermal evaporation technique. Refractive index and extinction coefficient dispersions were obtained from the spectral ellipsometry measurements. The dispersion of refractive index is described in the framework of Wemple-DiDomenico model. The energy pseudogap and Urbach energy were determined from the optical absorption spectrum of (Ga0.4In0.6)2Se3 thin film. Optical parameters of (Ga0.4In0.6)2Se3 thin film and single crystal were compared.
(Ga0.4In0.6)2Se3薄膜的光学参数
采用热蒸发法制备了(Ga0.4In0.6)2Se3薄膜。通过椭偏光谱测量得到了折射率和消光系数色散。在Wemple-DiDomenico模型框架下描述了折射率的色散。利用(Ga0.4In0.6)2Se3薄膜的光吸收光谱测定了其能量赝隙和乌尔巴赫能。比较了(Ga0.4In0.6)2Se3薄膜和单晶的光学参数。
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