Analytical modeling of VFET

Abstract

In this paper, an analytical model has been developed for the vacuum field-effect transistor (VFET). Mathematical expressions for drive in voltage and current has been derived. A drive in voltage has been modeled based on minimum current density for space charge limited emission. Analytical model of the channel current incorporates the device operating physics such as space charge limited emission and Fowler-Nordheim tunneling. The analytical model has been numerically verified with the practical data available. Proposed model provides the opportunity to evaluate the vacuum device characteristics and determine the future projections as well.