Low dark current LWIR HgCdTe focal plane arrays at AIM

M. Haiml, D. Eich, W. Fick, H. Figgemeier, S. Hanna, M. Mahlein, W. Schirmacher, R. Thöt
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引用次数: 1

Abstract

Cryogenically cooled HgCdTe (MCT) quantum detectors are unequalled for applications requiring high imaging as well as high radiometric performance in the infrared spectral range. Compared with other technologies, they provide several advantages, such as the highest quantum efficiency, lower power dissipation compared to photoconductive devices, and fast response times, hence outperforming micro-bolometer arrays. AIM will present its latest results on n-on-p as well as p-on-n low dark current planar MCT photodiode focal plane detector arrays at cut-off wavelengths >11 μm at 80 K. Dark current densities below the Rule’07 have been demonstrated for n-on-p devices. Slightly higher dark current densities and excellent cosmetics with very low cluster and point defect densities have been demonstrated for p-on-n devices.
AIM低暗电流LWIR HgCdTe焦平面阵列
低温冷却的HgCdTe (MCT)量子探测器在红外光谱范围内需要高成像和高辐射性能的应用中是无与伦比的。与其他技术相比,它们提供了几个优势,例如最高的量子效率,与光导器件相比更低的功耗,以及更快的响应时间,因此优于微测热计阵列。AIM将展示其在80 K下截止波长>11 μm的n-on-p和p-on-n低暗电流平面MCT光电二极管焦平面探测器阵列的最新研究成果。已经证明了n-on-p器件的暗电流密度低于07规则。对于p-on-n器件,已经证明了稍高的暗电流密度和具有极低簇和点缺陷密度的优秀化妆品。
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