Electro-Optic Barium Titanate Modulators on Silicon Photonics Platform

A. Posadas, V. Stenger, J. DeFouw, G. Mashanovich, D. Wasserman, A. Demkov
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Abstract

Single crystal barium titanate with both c-axis and a-axis orientation have been epitaxially integrated on silicon-on-insulator wafers. Electro-optic Mach-Zehnder modulators with both X-cut and Z-cut configurations are fabricated that exhibit Pockels coefficients of 180 and 130 pm/V, respectively, with Vpi-length values of <5 V-mm.
硅光子平台上的钛酸钡电光调制器
具有c轴和a轴取向的单晶钛酸钡已被外延集成在绝缘体上的硅晶片上。制备了具有X-cut和Z-cut配置的电光马赫-曾达调制器,其Pockels系数分别为180和130 pm/V, vpi长度值<5 V-mm。
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