Electrical and microstructure evolution of thick film lead-free resistors after various temperature treatments

K. Kielbasinski, M. Jakubowska, A. Mlozniak, M. Hrovat, J. Holc, D. Belavic
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Abstract

The series of lead-free thick film resistors were elaborated by Institute of Electronic Materials Technology (ITME) in Warsaw. The paper presents investigations of two pastes: R-100 with resistivity 100 Ω/❑ and R-100k with resistivity 100 kΩ/❑ The pastes were screen printed on alumina substrate with AgPd lead-free terminations. Then fired at several temperatures in the range 750–950°C for 10 minutes and 6 hours at highest temperature. Sheet resistivity and thermal coefficient of resistance (TCR) were measured. X-Ray diffractogramms were taken. The conductive phase that was RuO2 maintained initial crystal structure regardless firing conditions. No devitrification was observed in lead-free resistors glasses. The lattice constants of RuO2 were uniform at temperatures over 800°C. The resistors matched the desired resistivity and the TCR was least temperature dependent at the firing temperatures around 850°C.
不同温度处理后厚膜无铅电阻器的电学和微观结构演变
华沙电子材料技术研究所(ITME)研制了无铅厚膜电阻器系列。本文研究了电阻率为100 Ω/的R-100和电阻率为100 kΩ/的R-100k两种浆料。这种浆料用AgPd无铅端子丝网印刷在氧化铝基板上。然后在750-950°C范围内的几个温度下进行10分钟和最高温度下的6小时。测量了板材的电阻率和热阻系数。拍摄x射线衍射图。导电相为RuO2,在不同的烧制条件下均保持初始晶体结构。无铅电阻玻璃未见脱硝现象。在800℃以上的温度下,RuO2的晶格常数是均匀的。电阻匹配所需的电阻率,在850°C左右的烧制温度下,TCR对温度的依赖性最小。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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