Double capped InAs Quantum Dots with strain compensation layer grown on InP/Si substrate

2020 Opto-Electronics and Communications Conference (OECC) Pub Date : 2020-10-04 DOI:10.1109/OECC48412.2020.9273520

Takuto Shirai, Xu Han, T. Ishizaki, Koki Tsushima, Masaki Matsuura, Kota Shibukawa, Keita Fujiwara, Motonari Sato, K. Shimomura

引用次数: 0

Abstract

We have grown InAs quantum dots on InP and directly bonded InP/Si substrate using MOVPE where the strain of GaInAsP second cap layer were changed. We have investigated the density, size and optical characteristics dependent on difference of lattice mismatch of strain compensation layer.

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在InP/Si衬底上生长具有应变补偿层的双帽InAs量子点

我们利用MOVPE在InP和直接键合InP/Si衬底上生长了InAs量子点，并改变了GaInAsP第二帽层的应变。我们研究了应变补偿层的密度、尺寸和光学特性与晶格失配差的关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2020 Opto-Electronics and Communications Conference (OECC)

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