Transient charge pumping as a new technique for a higher sensitivity SOI MOSFET photodetector

Abstract

In this paper, we have used the partially depleted SOI MOSFET to measure the intensity of light. The charge pumping technique was used to get rid of the photogenerated carriers in the body in an attempt to keep the drain current constant. Using this technique flux densities as low as 2 mW/m2 were measured.