Effects of Sputtering Gas on Crystal Growth Orientations and Durability of Al-doped ZnO Transparent Electrodes in Harsh Environment

Fahmi Machda, Takaya Ogawa, H. Okumura, K. Ishihara
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引用次数: 1

Abstract

Aluminum-doped zinc oxide (AZO) transparent electrodes prepared by radio frequency (RF) magnetron sputtering were investigated to elucidate effects of crystal growth orientations on durability of AZO films, evaluated by electrical resistivity. During the deposition, the flow of oxygen gas was 60 sccm, while argon gas was varied from 3 to 60 sccm. As the argon gas flow increased, a transition of crystal growth orientations from (110) to (002) was observed by X-ray diffractometry (XRD). Damp heat test was conducted at 85°C and 85% of relative humidity for 25 days. As a result, the AZO films prepared with higher argon (or total) gas flows having (002) main crystal growth orientation exhibited better durability.
溅射气体对恶劣环境下掺铝ZnO透明电极晶体生长取向和耐久性的影响
采用射频磁控溅射法制备了掺铝氧化锌(AZO)透明电极,研究了晶体生长取向对AZO薄膜耐久性的影响。在沉积过程中,氧气流量为60 sccm,氩气流量为3 ~ 60 sccm。x射线衍射(XRD)观察到,随着氩气流量的增加,晶体生长取向由(110)向(002)转变。湿热试验在85℃、85%相对湿度条件下进行,持续25天。结果表明,主晶体生长取向为(002)的高氩气流量(或总气流量)制备的AZO膜具有较好的耐久性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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