A 2D analytical model of the channel potential and threshold voltage of Double-Gate (DG) MOSFETs with vertical Gaussian doping profile

2009 International Multimedia, Signal Processing and Communication Technologies Pub Date : 2009-03-14 DOI:10.1109/MSPCT.2009.5164172

P. Tiwari, Surendra Kumar, S. Mittal, Vaibhav Srivastava, Utkarsh Pandey, S. Jit

引用次数: 43

Abstract

The paper presents a 2D analytical model for the potential function and threshold voltage of symmetric Double-Gate (DG) MOSFETs with vertical Gaussian doping profile in the channel.

查看原文本刊更多论文

垂直高斯掺杂双栅mosfet通道电位和阈值电压的二维解析模型

本文建立了沟道中垂直高斯掺杂的对称双栅mosfet的势函数和阈值电压的二维解析模型。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2009 International Multimedia, Signal Processing and Communication Technologies

自引率

0.00%

发文量