Properties of an open structure mixer at 584 GHz and GHz

1983 Eighth International Conference on Infrared and Millimeter Waves Pub Date : 1983-12-01 DOI:10.1109/irmm.1983.9126390

H. Roser, E. J. Durwen, R. Wattenbach, G. V. Schultz

引用次数: 0

Abstract

A submillimeter heterodyne receiver with a Schottky barrier diode in a open structure mixer has been investigated at 584 GHz and 803 GHz. Working at room temperature a single sideband system noise temperature of 5,950 K and 11,700 K respectively has been achieved.

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584ghz和GHz下开放结构混频器的特性

在584ghz和803ghz频率下，研究了一种带肖特基势垒二极管的亚毫米外差接收机。在室温下，单频带系统噪声温度分别为5,950 K和11,700 K。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1983 Eighth International Conference on Infrared and Millimeter Waves

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