A Millimeter-Wave Reconfigurable On-Chip Coupler with Tunable Power-Dividing Ratios

Yang Yang, Z. Hou, Xi Zhu, W. Che, Q. Xue
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Abstract

This paper presents a millimeter-wave on-chip tunable coupler with tunable power dividing ratios and constant phase responses. Composed by two coupled-lines, two capacitors and two series-connected varactors, the proposed tunable coupler offers wideband frequency responses. Theoretical analysis for wideband operation is provided with design parameters. For demonstration, a millimeter-wave tunable coupler is implemented in a standard 0.13-μm SiGe (Bi) CMOS technology and measured through an on-wafer probing system. From 25 to 31 GHz, the proposed tunable coupler shows a power-dividing ratio tuned from 0 to 5 dB, while maintaining an in-band return loss of better than 10 dB and an output isolation of 20 dB, simultaneously. The phase imbalance is better than ±4° with a measured insertion loss of 1.6 dB across the entire tuning range.
具有可调谐功率分比的毫米波可重构片上耦合器
本文提出了一种毫米波片上可调谐耦合器,具有可调谐的功率分配比和恒定的相位响应。该可调谐耦合器由两条耦合线、两个电容和两个串联的变容管组成,可提供宽带频率响应。对宽带运行进行了理论分析,给出了设计参数。为了演示,毫米波可调谐耦合器在标准的0.13 μm SiGe (Bi) CMOS技术中实现,并通过晶圆上探测系统进行测量。在25 ~ 31 GHz范围内,该可调谐耦合器的功率分配比在0 ~ 5 dB范围内可调谐,同时保持了优于10 dB的带内回波损耗和20 dB的输出隔离。相位不平衡优于±4°,在整个调谐范围内测量的插入损耗为1.6 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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