Structural, electrical and surface static charge investigation of TiO2 thin films doped with different amount of vanadium

Abstract

In this work structural, electrical and antistatic properties of TiO2 thin films doped with different amount of V have been presented. It was shown that the doped thin films are semiconductors in room temperature. The amount of V dopant has a great influence on resistivity of prepared thin films similarly as annealing at 400°C. The time of static charge dissipation from the thin films surface dropped from 1.284 s (for undoped TiO2) to 0.508 s (for doped with V). Although variation in the amount of V dopant in the range from 19 to 23 at. % results in three orders of magnitude change of resistivity, all doped thin films displayed similar antistatic properties.