Circuit and process parameters issue for 1.57542GHz low noise amplifier in 0.35µm BiCMOS technology

Abstract

In this paper a two-stage low noise amplifier (LNA) in 0.35 µm BiCMOS technology is presented. The first LNA stage is a common source amplifier in the cascode configuration where source inductor degeneration is used for narrowband input matching at 1.57542 GHz. Additional common source amplifier, as the second LNA stage, is added in order to increase total forward gain (S21) of the LNA. Optimized LNA has −12.01 dB input return loss (S11), high reverse isolation S12 = −39.19 dB, very high voltage gain S21 = 23.83 dB, output return loss S22 = −10.61 dB, noise figure of 2.035 dB and power consumption of 9.9 mA at 3.3 V. The presented LNA offers circuit stability parameters B1f = 953.3 m and Kf = 2.558 Significance of the process and mismatch variation and its influence on circuit performance has been demonstrated with Monte Carlo Analysis.