A double channel normally-off SiC JFET device with ultra-low on-state resistance

Abstract

In this paper we report a novel 'all-epitaxial' 1.2 kV normally-off JFET featuring a double channel to improve considerably the specific on-state resistance. The device relies on a succession of n and p/sup +/ stripes in the channel/gate region. A 30% reduction in the on-resistance is obtained when compared to a standard single channel normally-off JFET. Depending on the structure considered, the unipolar value of the specific on-state resistance for a 1.2 kV device is below 3 m/spl Omega/cm/sup 2/.