32 GHz and 40 GHz bandwidth distributed amplifier MMICs based on N-channel SiGe MODFETs

International Semiconductor Device Research Symposium, 2003 Pub Date : 2003-12-10 DOI:10.1109/ISDRS.2003.1271993

P. Abele, I. Kallfass, H. Schumacher, M. Zeuner, T. Muller, T. Hackbarth, U. Konig, D. Chrastina, H. von Kanel

引用次数: 0

Abstract

Two distributed amplifiers using n-type SiGe MODFETs as active devices and a coplanar waveguide topology on high resistivity silicon substrate were fabricated. Each of the amplifiers consist of six identical stages, one using a cascode transistor configuration and the other a common source transistor configuration. The distributed amplifier in cascode configuration has an increased bandwidth of 40 GHz and a gain of 4 dB with a ripple of /spl plusmn/0.4 dB. The other amplifier has a bandwidth of 32 GHz and a gain of 5.5 dB with a ripple of /spl plusmn/0.8 dB.

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基于n通道SiGe modfet的32ghz和40ghz带宽分布式放大器mmic

采用n型SiGe modfet作为有源器件和高阻硅衬底共面波导拓扑结构制备了两个分布式放大器。每个放大器由六个相同的级组成，一个使用级联晶体管配置，另一个使用公共源晶体管配置。级联码配置的分布式放大器带宽增加了40 GHz，增益为4 dB，纹波为/spl + /0.4 dB。另一个放大器的带宽为32 GHz，增益为5.5 dB，纹波为/spl plusmn/0.8 dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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International Semiconductor Device Research Symposium, 2003

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