GaN Gunn diodes for THz signal generation

2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017) Pub Date : 2000-06-11 DOI:10.1109/MWSYM.2000.862354

E. Alekseev, D. Pavlidis

引用次数: 31

Abstract

The frequency and power capability of GaN-based Gunn diodes are evaluated using transient hydrodynamic simulations. GaN Gunn oscillators with 2 /spl mu/m-thick GaN Gunn diodes are predicted to have a fundamental frequency of 148-162 GHz and power density of >10/sup 5/ W/cm/sup 2/. Due to their high frequency and power characteristics, applications of these devices are envisaged for THz signal generation.

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用于太赫兹信号产生的GaN - Gunn二极管

利用瞬态流体动力学模拟对氮化镓基Gunn二极管的频率和功率性能进行了评估。具有2/ spl mu/m厚GaN Gunn二极管的GaN Gunn振荡器预计具有148-162 GHz的基频和>10/sup 5/ W/cm/sup 2/的功率密度。由于其高频和功率特性，这些器件的应用被设想为太赫兹信号的产生。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)

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