Determining the Emission of a Device from the Near Field of an IC

Abstract

EMC parameters of complex ICs are unknown. Therefore the simulation of the emission of electronic devices is challenging. The article introduces a method to describe ICs by an equivalent current. It is explained how this current can be determined metrological and used for a calculation of the far field. Any IC can be characterized by an equivalent current. Hence, the equivalent current can be used as a global IC EMC parameter.