Optimization of interdigitated back contact geometry in silicon heterojunction solar cell

Abstract

In-house developed 2D semiconductor simulator ASPIN3 is used to simulate amorphous silicon / crystalline silicon heterojunction cells with interdigitated contacts on the back side. Our focus is on finding the optimal widths of emitter and back surface field stripes as well as the width of the gap between them. Analysis of the three dimensional parameter space reveals that high efficiencies can be achieved for relatively large widths, over 100 μm, allowing the use of simple patterning techniques to create the cells.