Influence of γ-Radiation on Optical and Electric Properties of 90Bi2Te3-10Bi2Se3 Doped Films of P-and N-Types Conductivity

Int. J. Chemoinformatics Chem. Eng. Pub Date : 1900-01-01 DOI:10.4018/ijcce.2013010101

N. M. Abdullayev, Faig Bakhman Ogli Naghiyev, N. Z. Jalilov, N. R. Memmedov, I. T. Mamedova

引用次数: 2

Abstract

There has been investigated the influence of ?-radiation on absorption spectra in energy range 1A·6.5 eV and temperature dependence of 90Bi2Te3-10Bi2Se3 film conductivity of p-and n-types conductivity within 1A·5 eV. It is established that ?-irradiation of films with intensity ?=1.384 rad/sec brings about the formation of temporary lattice defects.

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γ辐射对90Bi2Te3-10Bi2Se3掺杂p型和n型电导率薄膜光学和电性能的影响

研究了-辐射对1A·6.5 eV能量范围内90Bi2Te3-10Bi2Se3薄膜电导率的影响，以及1A·5 eV范围内p型和n型电导率的温度依赖性。结果表明，辐照强度为?=1.384 rad/sec的薄膜会形成暂时的晶格缺陷。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Int. J. Chemoinformatics Chem. Eng.

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