CMOS Schottky diode microwave power detector fabrication, SPICE modeling, and applications

Abstract

CMOS Schottky diodes with various contact areas and geometries were fabricated through 0.35/spl mu/ CMOS process. Fabricated diodes were tested under DC and RF direct injection. Based on the measured result, a CMOS Schottky diode SPICE model is suggested and simulated. The suggested SPICE model is used for designing charge pump circuits and a low-voltage reference circuit.