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Si and SiGe Epitaxial Growth in view of Nanosheet CMOS Devices and 3D Sequential Integration

Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI:10.7567/ssdm.2021.k-6-01
Roger Loo, A. Hikavyy, C. Porret, E. Rosseel, G. Rengo, Rami Khazaka, Qi Xie, André Vantomme, Robert Langer
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基于纳米片CMOS器件和三维顺序集成的Si和SiGe外延生长
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials
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