A fast, fully verifiable, and hardware predictable ASIC design methodology

P. Yang, M. Marek-Sadowska
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引用次数: 2

Abstract

In this paper, a fast, fully verifiable, and hardware predictable ASIC design methodology is proposed and demonstrated for the Vertical Slit FET (VeSFET) based integrated circuits. The key enablers of this methodology are the unique and powerful capabilities of pillar-based two-side accessible transistor arrays and monolithic 3D integration. VeSFET is a successfully fabricated transistor of this kind. In the proposed methodology, the circuit is first designed on a 3D FPGA platform using a conventional FPGA design flow. With a little extra Back End of Line (BEOL) masking cost, the design implemented on the 3D FPGA is migrated to the final 2D ASIC, which has exactly the same performance and the verification tasks performed on the 3D FPGA platform remain valid for the final 2D ASIC. The 2D ASIC has the same layout as the silicon-proven 3D FPGA, which greatly mitigates the unpredictable factors of fabrication. The proposed methodology retains all the benefits of FPGA design flow. Eleven MCNC benchmark circuits were implemented. Comparing to the 2D FPGA, the performance of the final 2D ASIC implementation as well as the performance of the 3D FPGA design platform are on average 15% faster, consume 17% less power and 44% less area.
一种快速、完全可验证、硬件可预测的ASIC设计方法
本文提出并演示了一种基于垂直狭缝场效应管(VeSFET)集成电路的快速、完全可验证和硬件可预测的ASIC设计方法。这种方法的关键促成因素是基于柱的双向可访问晶体管阵列和单片3D集成的独特而强大的功能。VeSFET就是一种成功制造的这种晶体管。在提出的方法中,首先使用传统的FPGA设计流程在3D FPGA平台上设计电路。通过少量额外的后端屏蔽成本,将在3D FPGA上实现的设计迁移到最终的2D ASIC上,后者具有完全相同的性能,并且在3D FPGA平台上执行的验证任务对于最终的2D ASIC仍然有效。2D ASIC与经过硅验证的3D FPGA具有相同的布局,这大大减轻了制造过程中的不可预测因素。所提出的方法保留了FPGA设计流程的所有优点。实现了11个MCNC基准电路。与2D FPGA相比,最终2D ASIC实现的性能以及3D FPGA设计平台的性能平均快15%,功耗减少17%,面积减少44%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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