Broadband Low-Noise Monolithic GaAs Microwave Amplifiers with Very Low Power Consumption

1988 18th European Microwave Conference Pub Date : 1988-10-01 DOI:10.1109/EUMA.1988.333870

G. Donzelli, M. Pillan, L. Scopelliti, E. Bastida

引用次数: 5

Abstract

A new general design phylosophy for producing cost-effective GaAs MMIC's is described. As a particular application, the design and the test results for wide-band and low-noise amplifier chips with an extremaly low power consumption are reported and discussed.

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低功耗宽带低噪声单片砷化镓微波放大器

描述了一种新的通用设计理念，用于生产具有成本效益的GaAs MMIC。作为一种特殊的应用，本文报道并讨论了超低功耗的宽带低噪声放大芯片的设计和测试结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1988 18th European Microwave Conference

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