Experimental and Simulation Study of Secondary Ion-Induced Multiple Cell Upsets under Heavy Ion Irradiation

2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2020-10-01 DOI:10.1109/RADECS50773.2020.9857709

A. M. Galimov, Alexey I. Gukov, Andrey A. Klyayn, Alexandr E. Koziukov

引用次数: 0

Abstract

Multiple cell upsets potentially caused by secondary ion impact were observed in the heavy ion backside irradiation experiment of 40 nm SRAM. Geant4 simulation was carried out to evaluate the occurrence probability of such events.

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重离子辐照下二次离子诱导多细胞破坏的实验与模拟研究

在40 nm SRAM的重离子背面辐照实验中，观察到二次离子冲击可能引起的多重细胞紊乱。通过Geant4仿真来评估此类事件发生的概率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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