A Novel Domino Logic with Modified Keeper in 16nm CMOS Technology

Anu Mehra, Smita Singhal, U. Tripathi
{"title":"A Novel Domino Logic with Modified Keeper in 16nm CMOS Technology","authors":"Anu Mehra, Smita Singhal, U. Tripathi","doi":"10.7251/els1923041s","DOIUrl":null,"url":null,"abstract":"Domino logic is a clocked CMOS (Complementary Metal-Oxide Semiconductor) logic with fewer transistors than static CMOS logic. A PMOS (P-type Metal-Oxide Semiconductor) transistor, known as “keeper”, is included in the design to improve the noise tolerance performance and to reduce the leakage current. The aspect ratio i.e. W/L of the keeper (W=width and L=length) is kept low for the correct functionality of the domino logic. This paper proposes a domino logic with modified keeper in order to improve the circuit with respect to power and area as compared to various existing techniques of domino logic i.e. clock delayed domino logic (CDD), high speed domino logic (HSD), multi threshold high speed domino logic (MHSD), clock delayed sleep mode domino logic (CDSMD), sleep switch domino logic (SSDD), PMOS only sleep switch domino logic (PSSDD), reduced delay variations domino logic (RDVD) and Foot Driven Stack Transistor Domino Logic (FDSTDL). The proposed as well as existing domino logics, for 8-input as well as 16-input OR gate in 16nm CMOS technology, are simulated for different values of W/L of keeper with W/L ratio ranging from 1 to 6. The power-delay-product(PDP) of proposed design has improved as compared to the existing designs. For 8-input OR gate and W/L=6, PDP had improved to maximum of 99.99% for CDD and minimum of 38.09% for SSDD.","PeriodicalId":290965,"journal":{"name":"Electronics ETF","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electronics ETF","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.7251/els1923041s","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

Domino logic is a clocked CMOS (Complementary Metal-Oxide Semiconductor) logic with fewer transistors than static CMOS logic. A PMOS (P-type Metal-Oxide Semiconductor) transistor, known as “keeper”, is included in the design to improve the noise tolerance performance and to reduce the leakage current. The aspect ratio i.e. W/L of the keeper (W=width and L=length) is kept low for the correct functionality of the domino logic. This paper proposes a domino logic with modified keeper in order to improve the circuit with respect to power and area as compared to various existing techniques of domino logic i.e. clock delayed domino logic (CDD), high speed domino logic (HSD), multi threshold high speed domino logic (MHSD), clock delayed sleep mode domino logic (CDSMD), sleep switch domino logic (SSDD), PMOS only sleep switch domino logic (PSSDD), reduced delay variations domino logic (RDVD) and Foot Driven Stack Transistor Domino Logic (FDSTDL). The proposed as well as existing domino logics, for 8-input as well as 16-input OR gate in 16nm CMOS technology, are simulated for different values of W/L of keeper with W/L ratio ranging from 1 to 6. The power-delay-product(PDP) of proposed design has improved as compared to the existing designs. For 8-input OR gate and W/L=6, PDP had improved to maximum of 99.99% for CDD and minimum of 38.09% for SSDD.
一种基于16nm CMOS技术的新型Domino逻辑
Domino逻辑是一种时钟CMOS(互补金属氧化物半导体)逻辑,比静态CMOS逻辑具有更少的晶体管。在设计中加入了PMOS (p型金属氧化物半导体)晶体管,称为“keeper”,以提高噪声容限性能并降低泄漏电流。为了保证domino逻辑的正确功能,管理员的宽高比,即W/L (W=宽度,L=长度)保持在较低的水平。与现有的各种多米诺逻辑技术,即时钟延迟多米诺逻辑(CDD)、高速多米诺逻辑(HSD)、多阈值高速多米诺逻辑(MHSD)、时钟延迟睡眠模式多米诺逻辑(CDSMD)、睡眠开关多米诺逻辑(SSDD)、PMOS仅睡眠开关多米诺逻辑(PSSDD)相比,本文提出了一种带有修改keeper的多米诺逻辑,以改进电路的功率和面积。减少延迟变化的多米诺逻辑(RDVD)和脚驱动堆栈晶体管多米诺逻辑(FDSTDL)。针对16纳米CMOS技术中8输入和16输入OR门的不同W/L值(W/L比值为1 ~ 6),对本文提出的和现有的多米诺骨牌逻辑进行了仿真。与现有设计相比,该设计的功率延迟积(PDP)得到了改进。对于8输入OR门,W/L=6时,CDD的PDP最大值为99.99%,SSDD的PDP最小值为38.09%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信