Single photon sources based on semiconductor quantum dots

2010 IEEE Photonics Society Winter Topicals Meeting Series (WTM) Pub Date : 2010-02-25 DOI:10.1109/PHOTWTM.2010.5421926

D. Bimberg, E. Stock

引用次数: 0

Abstract

Efficient generation of single polarized photons or entangled photon pairs will be based on semiconductor quantum dots (QDs). Using submicron oxide current apertures, we were able to realize single InAs/GaAs QD based LEDs.

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基于半导体量子点的单光子源

基于半导体量子点(QDs)的单偏振光子或纠缠光子对的高效产生将成为可能。利用亚微米的氧化电流孔径，我们能够实现基于单InAs/GaAs的QD led。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2010 IEEE Photonics Society Winter Topicals Meeting Series (WTM)

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