Toward Monolithic Optoelectronic Integration of GeSn Photodiode and FinFET on GeSnOI Platform

2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI:10.1109/GROUP4.2019.8925847

Shengqiang Xu, Yi-Chiau Huang, D. Lei, S. Masudy‐Panah, X. Gong, Y. Yeo

引用次数: 0

Abstract

We demonstrated a GeSn-on-insulator platform for monolithic optoelectronic integration for applications at 2 μm wavelength range and beyond. Both GeSn photo detector and p-channel fin field-effect transistor were realized using this novel architecture.

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GeSnOI平台上GeSn光电二极管与FinFET单片光电集成研究

我们展示了一种用于2 μm及以上波长范围单片光电集成的gsn -on-insulator平台。利用该结构实现了GeSn光探测器和p沟道翅片场效应晶体管。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2019 IEEE 16th International Conference on Group IV Photonics (GFP)

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