Gradient free sol-gel Pb(Zrx, Ti1-x)O3 thin films

Abstract

Pb(Zr_x,Ti_1-x)O₃ thin films of homogeneous composition were synthesized by means of a modified sol-gel route on Pt(111)/TiO_x/SiO₂/Si substrates. The usually observed gradient in B-site composition could be reduced from plusmn12 to plusmn2.5 at% amplitude in Zr concentration fluctuations. The obtained 2 mum thick, dense and crack free films exhibited a {100}-texture index of 98.4%. Grain diameters increased at the same time by 50%. Dielectric and piezoelectric properties were remarkably improved. The relative dielectric constant epsiv_33f was obtained as 1620, and the remanent transverse piezoelectric coefficient e_31f-was measured as -17.7 C/m².