High detectivity MWIR Type-II superlattice grown on a GaAs substrate

M. Hobbs, S. Das, C. H. Tan, J. David, S. Krishna, J. B. Rodriguez, E. Plis
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Abstract

Specific detectivity values of 1.0×1011, 2.8×109 and 5.8×108cmHz1/2/W were measured at 77, 200 and 290K, respectively, on a MWIR Type-II InAs/GaSb Superlattice photodiode grown on a GaAs substrate.
在GaAs衬底上生长的高检出率MWIR ii型超晶格
在GaAs衬底上生长的MWIR ii型InAs/GaSb超晶格光电二极管在77、200和290K下分别测量了1.0×1011、2.8×109和5.8×108cmHz1/2/W的比检出率。
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