Monolithic Integration of GaAs/AlGaAs Phase Modulator and Photodetector for RF Photonics

OFC/NFOEC 2008 - 2008 Conference on Optical Fiber Communication/National Fiber Optic Engineers Conference Pub Date : 2008-02-24 DOI:10.1109/OFC.2008.4528065

M. Jarrahi, D. Miller, T. Lee

引用次数: 0

Abstract

We report the design and monolithic fabrication of phase modulator and photodetectors for RF photonics. We demonstrate phase modulation efficiency of 270°V^-1mm^-1, and a bandwidth of 18 GHz. Photodetectors response time is measured to be 8ps.

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用于射频光子学的GaAs/AlGaAs相位调制器和光电探测器的单片集成

我们报道了射频光子学的相位调制器和光电探测器的设计和单片制造。我们演示了相位调制效率为270°V-1mm-1，带宽为18 GHz。光电探测器的响应时间测量为8ps。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

OFC/NFOEC 2008 - 2008 Conference on Optical Fiber Communication/National Fiber Optic Engineers Conference

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