Calculation of exciton energy in InAs/InP self-assembled semiconductor quantum wires

Xu Zihuan, L. Yumin, Yuan ZhongYuan, Yao Wenjie
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Abstract

Theoretical calculations of exciton in InAs/InP self-assembled quantum wires are presented in this paper. The Coulomb interaction between the electron and hole is calculated by using a fast Fourier transformation. In our simulations, strain effects are taken into consideration. Finally, we obtain the exciton binding energy in quantum wires by solving 1D Schrodinger equation along the quantum wire direction.
InAs/InP自组装半导体量子线激子能量的计算
本文介绍了InAs/InP自组装量子线中激子的理论计算。利用快速傅立叶变换计算了电子与空穴之间的库仑相互作用。在我们的模拟中,考虑了应变效应。最后,通过沿量子线方向求解一维薛定谔方程,得到了量子线中激子的结合能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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