Design and analysis of a W-Band detector in 0.18-µm SiGe BiCMOS

Abstract

This paper presents the analysis, design and implementation of a millimeter-wave W-band power detector. Fabricated in a 0.18-µm SiGe BiCMOS technology, the detector circuit exhibits a responsivity of 91 kV/W, a noise equivalent power of 0.5 pW/Hz, and a noise figure of 29 dB. The power dissipation of the detector is 75 µW. Reasonable agreement between simulations and measurements is obtained. To the authors' best knowledge, the detector in this work achieves the highest responsivity reported to date for any solid-state W-band detector.