A 20 GHz FET amplifier in an integrated finline/microstrip configuration

Abstract

A description is given of the design and fabrication of an 20-GHz FET amplifier that uses an integrated combination of finline and microstrip. A broadband finline-to-microstrip transition is presented. The transition incorporates a biasing network to provide unconditional stability. The single-stage amplifier, including transitions, provides better than 6-dB gain over a 1.25-GHz bandwidth.<>