Influence of X-ray Source Spectrum on TID Degradation of CMOS Devices

Abstract

The paper presents an evaluation of degradation of parameters of CMOS devices under x-ray irradiation with different spectra. Using aluminum filters of different thicknesses and various operating modes of the X-ray facility the low-energy part of X-ray spectrum was attenuated. The obtained data indicates that the modification of the X-ray energy spectrum affects ionizing radiation response of CMOS ICs parameters. A quantitative assessment of the difference in the radiation behavior of IC’s parameters is given. A hypothesis that can explain the cause of difference in parameter degradation is put forward.