Towards ultra-dense arrays of VHF NEMS with FDSOI-CMOS active pixels for sensing applications

Abstract

This paper presents the first realization of a fully co-integrated single-crystal NEMS resonator and its CMOS electronics on a single chip. The CMOS technol ogy is based on a "home-made" 0.3μm fully depleted (FD) SOI technology. The resonator fabricated from the SOI silicon layer in a top-down front-end VLSI process is actuated thanks to electrostatic forces. The vibrations are detected differentially with two p-doped silicon piezoresistive (PZR) gauges. Details concerning the NEMS-FD SOI CMOS technological process can also be found in [3] while this paper primarily reports on the design of the circuitry and its first electrical measurements.