Temperature dependence of the threshold and auger recombination in asymmetric quantum-well heterolasers

5th International Workshop on Laser and Fiber-Optical Networks Modeling, 2003. Proceedings of LFNM 2003. Pub Date : 2003-11-17 DOI:10.1117/12.583462

I. Sukhoivanov, O. Mashoshyna, V. Kononenko, Dmitrii Ushakov

引用次数: 4

Abstract

In this work, the temperature dependence of the lasing threshold in the GalnAs-GaInAsP-InP bi-quantum-well heterolasers with different widths of the quantum wells (5 and 9 nm) has been determined. The AR rate increases practically exponentially in the temperature interval 250 to 350 K. Including into consideration the processes of nonradiative AR allows to take account of the nonequilibrium processes which occur in the active region of the quantum-well lasers more completely and accurately.

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非对称量子阱异光激光器中阈值和俄歇复合的温度依赖性

本文研究了不同量子阱宽度(5 nm和9 nm)的galas - gainasp - inp双量子阱异质激光器激光阈值的温度依赖性。在250 ~ 350k温度范围内，AR率呈指数级增长。考虑非辐射AR过程可以更完整、更准确地考虑发生在量子阱激光器有源区域的非平衡过程。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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5th International Workshop on Laser and Fiber-Optical Networks Modeling, 2003. Proceedings of LFNM 2003.

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