A G band frequency quadrupler in 55 nm BiCMOS for bist applications

2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC) Pub Date : 2017-04-20 DOI:10.1109/INMMIC.2017.7927310

W. Aouimeur, E. Lauga-Larroze, J. Arnould, J. Moron-Guerra, C. Gaquière, S. Lépilliet, T. Quemerais, D. Gloria, A. Serhan

引用次数: 2

Abstract

In this paper, a frequency quadrupler based on a single ended frequency doubler, a new Marchand Balun with Coupled Slow-wave Coplanar Wave (CS-CPW) lines and a balanced frequency doubler in G band is presented and analyzed for in-situ characterization applications. The experimental results of the frequency quadrupler exhibit at 180 GHz a peak output power of −4.5 dBm associate with a linear conversion gain of −5.5 dB, a frequency bandwidth of 160 to 190 GHz and a DC power consumption of 39 mW. This quadrupler has been fabricated in the 55 nm SiGe BiCMOS technology from STMicroelectronics, the chip area is 1850×780 μm2 including the pads.

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55纳米BiCMOS中G波段频率四倍器的应用

本文提出了一种基于单端倍频器、具有耦合慢波共面波(CS-CPW)线的新型Marchand Balun和G波段平衡倍频器的四倍频器，并对其进行了原位表征分析。实验结果表明，该频率四倍器在180 GHz时的峰值输出功率为- 4.5 dBm，线性转换增益为- 5.5 dB，频率带宽为160 ~ 190 GHz，直流功耗为39 mW。该四倍频器采用意法半导体55nm SiGe BiCMOS工艺制造，芯片面积为1850×780 μm2。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC)

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