Quantum mechanical simulations of nano-structures and nano-devices

Abstract

We have investigated the quantum mechanical effects in quantum dots and nano size silicon MOSFETs using empirical psedupotential Hamiltonian model and linear combination of bulk band (LCBB) method. Unlike the traditional effective mass approximation and kp method, our approach uses a full zone expansion to represent the electronic state. This method provides a very fast yet accurate way to simulate million atom nano structures and nano devices even on a single processor personal computer.