75-VDC GaN technology investigation from a degradation perspective

Abstract

In this paper an automated measurement system for the investigation of degradation phenomena in GaN FETs is presented. The system is able to perform both static and dynamic stress cycles under actual device operation, gathering useful information strictly related to the “health” of the device. As case study a 75-VDC GaN HEMT was used for a 19-hours stress test, putting in evidence how the device performance slightly degrades during the stress experiment.