Comparison of lumped-parameter circuit models for on-chip spiral inductors

Abstract

One-π physics-based equivalent-circuit models and behavioral macro-model for on-chip spiral inductors are investigated and compared in this work The physics-based models have the advantage in scalability and enable the prediction and optimization of inductor performance. The behavioral macro-model has the advantage in broadband modeling and may obtain better simulation accuracy in the time-domain analysis, especially for high-speed simulation. The two-port on-chip octagon spiral inductor has been fabricated using HHNEC 0.13 μm SiGe BiCMOS aluminum process to verify the fixed model. A good agreement is obtained between the measured data and calculation form the proposed model up to 40GHz.