A Study on Digital Active Gate Driving of DC-DC Converter for Suppressing Switching Surge Voltage

Abstract

High-speed switching of SiC unipolar power semiconductor devices induces an anomalous switching surge voltage in the switching operation of power conversion systems. An active gate driving can control the voltage/current behaviors of the power semiconductor device. It expects to suppress the switching surge voltage. We have focused on a fully digitalized active gate driver. In this paper, the digital active gate driver is applied to a SiC MOSFET in a boost DC-DC converter to improve its switching operation. The experimental results revealed that the driver successfully suppressed the switching surge voltage of SiC MOSFET in the converter.