New generation metal base free IGBT module structure with low thermal resistance

Abstract

Thermal resistance is one of the most important characteristics in the application of power semiconductors. This paper presents a new generation metal base free IGBT module structure with low thermal resistance. In the experimental results of our new product using the new metal base free structure, heat resistance is reduced by approximately 30% in comparison with the conventional structure. And we achieved improved mechanical strength and reliability characteristics. This was achieved by using a thick copper foil with our original thin zirconia doped alumina technology.