An over 220-GHz-Bandwidth Distributed Active Power Combiner in 250-nm InP DHBT

Abstract

A distributed active power combiner (DAPC) was designed and fabricated in 250-nm indium phosphide (InP) double-heterojunction bipolar transistor (DHBT) technology. A new DAPC configuration by using two separated distributed amplifiers with a distributed resistive combiner (DRC) is proposed to extend the bandwidth and reduce input crosstalk. The fabricated DAPC achieved a gain of 5 dB with a bandwidth of over 220 GHz, and an input crosstalk of less than −32 dB up to 67 GHz.